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Strain-induced creation and switching of anion vacancy layers in perovskite oxynitrides
Perovskite oxides can host various anion-vacancy orders, which greatly change their properties, but the order pattern is still difficult to manipulate. Separately, lattice strain between thin film oxides and a substrate induces improved functions and novel states of matter, while little attention ha...
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Published in: | Nature communications 2020-11, Vol.11 (1), p.5923-5923, Article 5923 |
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Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Perovskite oxides can host various anion-vacancy orders, which greatly change their properties, but the order pattern is still difficult to manipulate. Separately, lattice strain between thin film oxides and a substrate induces improved functions and novel states of matter, while little attention has been paid to changes in chemical composition. Here we combine these two aspects to achieve strain-induced creation and switching of anion-vacancy patterns in perovskite films. Epitaxial SrVO
3
films are topochemically converted to anion-deficient oxynitrides by ammonia treatment, where the direction or periodicity of defect planes is altered depending on the substrate employed, unlike the known change in crystal orientation. First-principles calculations verified its biaxial strain effect. Like oxide heterostructures, the oxynitride has a superlattice of insulating and metallic blocks. Given the abundance of perovskite families, this study provides new opportunities to design superlattices by chemically modifying simple perovskite oxides with tunable anion-vacancy patterns through epitaxial lattice strain.
Properties of perovskite oxides can be changed by manipulating anion-vacancy order patterns, but they are difficult to control. Here the authors show strain-induced creation and switching of anion vacancies in perovskite films in which the direction or periodicity of anion-vacancy planes is altered depending on the substrate employed. |
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ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/s41467-020-19217-7 |