Lateral Migration‐based Flash‐like Synaptic Device for Hybrid Off‐chip/On‐chip Training

• Published in: Advanced electronic materials 2024-04, Vol.10 (4), p.n/a
• Main Authors: Park, Min‐Kyu, Hwang, Joon, Lee, Kyung Min, Woo, Sung Yun, Kim, Jae‐Joon, Bae, Jong‐Ho, Lee, Jong‐Ho
• Format: Article
• Language: English
• Subjects: charge pumping; flash memory; lateral migration; neuromorphic systems; synaptic devices
• ISSN: 2199-160X; 2199-160X
• DOI: 10.1002/aelm.202300866

An increase in the demand for artificial intelligence is leading to advanced research in the field of neuromorphic systems, which imitate human brain functions with the hope of increasing computational speed and lowering power consumption. Especially, the development of energy‐efficient and reliable synaptic devices is critical as synapses are fundamental building blocks of neuromorphic systems. In this study, by adjusting the charge injection pathway of conventional flash memory devices, a lateral migration‐based synaptic device is proposed. Using the efficient program/erase method, the proposed device is operable at a significantly low voltage while maintaining formidable retention and endurance characteristics. Furthermore, an efficient hybrid off‐chip/on‐chip training method using the proposed device is presented. The results demonstrate a variation‐robust neuromorphic system, indicating the superiority of the proposed device. The first‐ever engineering application of lateral migration in charge trap memory, which is perceived as a disadvantage in the memory industry, is proposed to achieve low‐power operation while maintaining superior retention and improving endurance. By varying the length of tunneling oxide, the proposed device diverges from conventional techniques in existing flash and introduces a new approach for neuromorphic applications.