Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films

RF magnetron-deposited Si\In2O3:Er films have the structure of the single-crystalline bixbyite bcc In2O3 nanowires bunched into the columns extended across the films. The obtained films have a typical In2O3 optical band gap of 3.55 eV and demonstrate the 1.54 m Er3+ room temperature photoluminescenc...

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Bibliographic Details
Published in:Materials research express 2020-12, Vol.7 (12), p.125903
Main Authors: Feklistov, K V, Lemzyakov, A G, Prosvirin, I P, Gismatulin, A A, Shklyaev, A A, Zhivodkov, Y A, Krivyakin, G, Komonov, A I, Kozhukhov, S, Spesivsev, E V, Gulyaev, D V, Abramkin, D S, Pugachev, A M, Esaev, D G, Sidorov, G Yu
Format: Article
Language:English
Subjects:
band offset
Columns (structural)
Conduction bands
Emission analysis
Er
In2O3:Er
Indium oxides
Magnetic properties
Nanowires
Optical properties
Photoluminescence
Room temperature
Silicon
Single crystals
Thermionic emission
thin films
Voltage drop
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Summary:RF magnetron-deposited Si\In2O3:Er films have the structure of the single-crystalline bixbyite bcc In2O3 nanowires bunched into the columns extended across the films. The obtained films have a typical In2O3 optical band gap of 3.55 eV and demonstrate the 1.54 m Er3+ room temperature photoluminescence. The current across the film flows inside the columns through the nanowires. The current through the MOS-structure with the intermediate low barrier In2O3:Er dielectric was investigated by the thermionic emission approach, with respect to the partial voltage drop in silicon. Schottky plots ln(I/T2) versus 1/kT of forward currents at small biases and backward currents in saturation give the electron forward n-Si\In2O3:Er barrier equal to 0.14 eV and the backward In\In2O3:Er barrier equal to 0.21 eV.
ISSN:2053-1591
DOI:10.1088/2053-1591/abd06b