On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs

The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. Due to the introduction of trap levels in the GaN bandgap, it is well known that these impurities give...

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Bibliographic Details
Published in:Micromachines (Basel) 2021-06, Vol.12 (6), p.709
Main Authors: Zagni, Nicolò, Chini, Alessandro, Puglisi, Francesco Maria, Pavan, Paolo, Verzellesi, Giovanni
Format: Article
Language:English
Subjects:
Agreements
Approximation
auto-compensation
Behavior
Breakdown
breakdown voltage
Carbon
carbon doping
Compensation
compensation ratio
current collapse
Doping
Electric fields
Electric potential
First principles
Gallium nitrides
GaN power HEMTs
High electron mobility transistors
Impurities
Point defects
Semiconductor devices
Simulation
Transistors
Voltage
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Summary:The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. Due to the introduction of trap levels in the GaN bandgap, it is well known that these impurities give rise to dispersion, leading to the so-called “current collapse” as a collateral effect. Moreover, first-principles calculations and experimental evidence point out that C introduces trap levels of both acceptor and donor types. Here, we report on the modeling of the donor/acceptor compensation ratio (CR), that is, the ratio between the density of donors and acceptors associated with C doping, to consistently and univocally reproduce experimental breakdown voltage (VBD) and current-collapse magnitude (ΔICC). By means of calibrated numerical device simulations, we confirm that ΔICC is controlled by the effective trap concentration (i.e., the difference between the acceptor and donor densities), but we show that it is the total trap concentration (i.e., the sum of acceptor and donor densities) that determines VBD, such that a significant CR of at least 50% (depending on the technology) must be assumed to explain both phenomena quantitatively. The results presented in this work contribute to clarifying several previous reports, and are helpful to device engineers interested in modeling C-doped lateral GaN power HEMTs.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi12060709