Pulsed laser machining of silicon carbide wafers: A review

Achieving low-damage, high-quality, and high-efficiency pulsed laser processing of silicon carbide (SiC) wafers remains a significant challenge. During the machining of wide-bandgap SiC wafers, defects such as laser-induced thermal damage, stress-induced cracks, and non-thermal phase transitions are...

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Bibliographic Details
Published in:Journal of materials processing technology 2026-04, Vol.350, p.119241, Article 119241
Main Authors: Xuehua, Yu, Haiying, Wei, Yi, Zhang, Zelong, Qing, Fu, Liu, Yuchao, Yang, Yanpu, Li
Format: Article
Language:English
Subjects:
Laser dicing
Laser drilling
Laser machining mechanism
Laser slicing
Silicon carbide wafer
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