Hydrogenated amorphous and nanocrystalline silicon solar cells deposited by HWCVD and RF-PECVD on plastic substrates at 150°C

• Published in: Journal of non-crystalline solids 2008-05, Vol.354 (19-25), p.2376-2380
• Main Authors: Filonovich, S.A., Alpuim, P., Rebouta, L., Bourée, J.-E., Soro, Y.M.
• Format: Article
• Language: English
• Subjects: Applied sciences; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Conductivity; Cross-disciplinary physics: materials science; rheology; Energy; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Natural energy; Photoconductivity; Photovoltaic conversion; Photovoltaics; Physics; Silicon; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2007.09.030

In this work we present a study of the structural, optoelectronic and transport properties of a series of Si films deposited in a parameter region (namely hydrogen dilution) corresponding to a transition from amorphous-to-nanocrystalline silicon by hot-wire (HW) and radio-frequency plasma enhanced chemical vapor deposition (RF) on plastic substrates at 150°C. To achieve a higher deposition rate of Si films by RF we used a relatively high power density (350mW/cm2) and deposition pressure (1.5Torr). For certain hydrogen dilution values, these deposition conditions can lead to the formation of Si crystals in the silane plasma and to a growth of polymorphous silicon film. This material has improved carrier transport properties (ambipolar diffusion length=220nm) and very high photosensitivity (>5×106). The best HW amorphous silicon films exhibited lower photosensitivity (7×104) and an ambipolar diffusion length of only 100nm. For solar cell fabrication, we optimized the RF deposition conditions to produce very thin amorphous and nanocrystalline phosphorous and boron doped silicon layers. Our best n–i–p solar cell, with a polymorphous Si intrinsic layer deposited on plastic, has an efficiency of 5.5%, FF=52.5%, VOC=920mV, JSC=11.6mA/cm2. For solar cells with a nanocrystalline Si active layer deposited on glass the following results were achieved: efficiency=3.4%, FF=43.5%, VOC=460mV, JSC=17.2mA/cm2; and on plastic substrate: efficiency=2.2%, FF=32.7%, VOC=397mV, JSC=17.2mA/cm2.