High throughput sub-10 nm metallic particles organization on templates made by block copolymer self-assembly and nanoimprint

The combination of block copolymer (BCP) and nanoimprint lithography (NIL) presents a novel and cost-effective approach to achieve sub-50 nm patterning resolution. Through this study, the authors demonstrate the placement of a few Au nanoparticles per hole using capillary force assembly (CFA). Polys...

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Bibliographic Details
Published in:Microelectronic engineering 2015, Vol.141, p.155-159
Main Authors: Arias-Zapata, Javier, Cordeiro, Julien, Bohme, Sophie, Girardot, Cecile, Garnier, Jerome, Bezard, Philippe, Ntetsikas, Konstantinos, Liontos, George, Avgeropoulos, Apostolos, Peyrade, David, Zelsmann, Marc
Format: Article
Language:English
Subjects:
Block copolymers
Gold
Metal particles
Nanoparticles
Optoelectronic devices
Physics
Polymethyl methacrylates
Self assembly
Semiconductors
Silicon
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Summary:The combination of block copolymer (BCP) and nanoimprint lithography (NIL) presents a novel and cost-effective approach to achieve sub-50 nm patterning resolution. Through this study, the authors demonstrate the placement of a few Au nanoparticles per hole using capillary force assembly (CFA). Polystyrene block poly(dimethylsiloxane) (PS-b-PDMS) with spherical morphology is used as etching mask, which is then transferred into Si by a plasma etching. Si posts with ~35 nm of diameter, ~55 nm of height and ~51 nm of periodicity are obtained. Si templates are then used as a NIL master mould to pattern a thermoplastic resist. An ultra-high resolution hole-array is created on a polymethyl-methacrylate (PMMA) substrate, where 10-nm Au nanoparticles are placed in each hole. The BCP-NIL method, presented here, is highly promising for the current semiconductor industry to build devices in the fields of opto-electronics, chemical sensors and energy conversion and storage.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2015.03.004