Enhancement of electric and magnetic dipole transition of rare-earth-doped thin films tailored by high-index dielectric nanostructures

We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few-nanometer thin film of rare-earth-ion-doped clusters. Rare-earth ions provide electric and magnetic dipole transitions of sim...

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Bibliographic Details
Published in:Applied optics (2004) 2019-03, Vol.58 (7), p.1682
Main Authors: Wiecha, Peter R, Majorel, Clément, Girard, Christian, Arbouet, Arnaud, Masenelli, Bruno, Boisron, Olivier, Lecestre, Aurélie, Larrieu, Guilhem, Paillard, Vincent, Cuche, Aurélien
Format: Article
Language:English
Subjects:
Charged particles
Dimers
Far fields
General Physics
Laser beams
Magnetic dipoles
Metal ions
Nanorods
Nanostructure
Optics
Photoluminescence
Photonics
Physics
Rare earth elements
Recording
Spatial resolution
Thin films
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Summary:We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few-nanometer thin film of rare-earth-ion-doped clusters. Rare-earth ions provide electric and magnetic dipole transitions of similar magnitude. By recording the photoluminescence from the deposited layer excited by a focused laser beam, we are able to simultaneously map the electric and magnetic emission enhancement on individual nanostructures. In spite of being a diffraction-limited far-field method with a spatial resolution of a few hundred nanometers, our approach appeals by its simplicity and high signal-to-noise ratio. We demonstrate our technique at the example of single silicon nanorods and dimers, in which we find a significant separation of electric and magnetic near-field contributions. Our method paves the way towards the efficient and rapid characterization of the electric and magnetic optical response of complex photonic nanostructures.
ISSN:1559-128X
2155-3165
DOI:10.1364/ao.58.001682