Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 2018-11, Vol.362 (6415), p.665-670
Main Authors: Shim, Jaewoo, Bae, Sang-Hoon, Kong, Wei, Lee, Doyoon, Qiao, Kuan, Nezich, Daniel, Park, Yong Ju, Zhao, Ruike, Sundaram, Suresh, Li, Xin, Yeon, Hanwool, Choi, Chanyeol, Kum, Hyun, Yue, Ruoyu, Zhou, Guanyu, Ou, Yunbo, Lee, Kyusang, Moodera, Jagadeesh, Zhao, Xuanhe, Ahn, Jong-Hyun, Hinkle, Christopher, Ougazzaden, Abdallah, Kim, Jeehwan
Format: Article
Language:English
Subjects:
Adhesives
Boron
Boron nitride
Controlled cracks
Crack propagation
Current carriers
Field effect transistors
Flakes
Heterostructures
Materials handling
Molybdenum
Molybdenum disulfide
Monolayers
Multilayers
Nickel
Nucleation
Photoluminescence
Photons
Physics
Semiconductor devices
Splitting
Stacks
Transistors
Tungsten
Tungsten disulfide
Two dimensional materials
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Summary:Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming because it is a trial-and-error process. Controlling the number of 2D layers through direct growth also presents difficulty because of the high nucleation barrier on 2D materials. We demonstrate a layer-resolved 2D material splitting technique that permits high-throughput production of multiple monolayers of wafer-scale (5-centimeter diameter) 2D materials by splitting single stacks of thick 2D materials grown on a single wafer. Wafer-scale uniformity of hexagonal boron nitride, tungsten disulfide, tungsten diselenide, molybdenum disulfide, and molybdenum diselenide monolayers was verified by photoluminescence response and by substantial retention of electronic conductivity. We fabricated wafer-scale van der Waals heterostructures, including field-effect transistors, with single-atom thickness resolution.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.aat8126