Electrically tunable hole g factor of an optically active quantum dot for fast spin rotations

We report a large g factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x, the direction required for a coherent hole spin. The electrical field lies along the growth direction z and is changed over a large range,...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-04, Vol.91 (16), Article 165304
Main Authors: Prechtel, Jonathan H., Maier, Franziska, Houel, Julien, Kuhlmann, Andreas V., Ludwig, Arne, Wieck, Andreas D., Loss, Daniel, Warburton, Richard J.
Format: Article
Language:English
Subjects:
Chemical Sciences
Concentration gradient
Condensed matter
Electric fields
Engineering Sciences
Magnetic fields
Mathematical analysis
Mathematical models
Modulation
Optical activity
Physics
Qunatum dots
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Summary:We report a large g factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x, the direction required for a coherent hole spin. The electrical field lies along the growth direction z and is changed over a large range, 100 kV/cm. Both electron and hole g factors are determined by high resolution laser spectroscopy with resonance fluorescence detection. This, along with the low electrical-noise environment, gives very high quality experimental results. The hole g factor g sub(h) super(x) depends linearly on the electric field F sub(z), dg sub(h) super(x)/dF sub(z) = (8.3 + or - 1.2) x 10 super(-4) cm/kV, whereas the electron g factor g sub(e) super(x) is independent of electric field dg sub(e) super(x)/dF sub(z)= (0.1 + or - 0.3) x 10 super(-4) cm/kV (results averaged over a number of quantum dots). The dependence of g sub(h) super(x) on F sub(z) is well reproduced by a 4 x 4 k times p model demonstrating that the electric field sensitivity arises from a combination of soft hole confining potential, an In concentration gradient, and a strong dependence of material parameters on In concentration. The electric field sensitivity of the hole spin can be exploited for electrically driven hole spin rotations via the g tensor modulation technique and based on these results, a hole spin coupling as large as ~1 GHz can be envisaged.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.91.165304