Indium oxide nanoparticles for resistive RAM integration using a compatible industrial technology

• Published in: Solid-state electronics 2021-02, Vol.176, p.107958, Article 107958
• Main Authors: Guenery, P.V., León Pérez, E.A., Ayadi, K., Baboux, N., Deleruyelle, D., Blonkowski, S., Moeyaert, J., Baron, T., Militaru, L., Souifi, A.
• Format: Article
• Language: English
• Subjects: Engineering Sciences; Forming-free RRAM; Indium oxide; Materials; Nanoparticles; NVM
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2021.107958

•Uniform layer deposition by MOCVD on 12″ wafers of high density sub-10 nm indium oxide nanoparticles.•Compatible CMOS BEOL process for vertical resistive memories integration.•Proof-of-concept of forming-free ox-RRAM device.•Bipolar resistive switching due to indium oxide nanoparticles integration.•Strong Improvement of ION/IOFF ratio and retention time thanks to indium oxide NPs. In this work we report on the integration of indium oxide (In2O3) nanoparticles (NPs) for Resistive Random Access Memory (RRAM) applications. This low-temperature integration process is fully compatible CMOS Back-End integration given a carefull selection of materials deposited by MOCVD and ALD. A detailed description of the process is provided together with AFM analysis performed on the indium oxide nanoparticles and TEM cross-sections on the whole stack. It is shown that the introduction of In2O3 NPs provides bipolar switching behavior together with promising electrical performances in terms of large OFF/ON resistance ratio (106) and retention time at room temperature.