Room-temperature 1.54 μm photoluminescence from Er-doped Si-rich silica layers obtained by reactive magnetron sputtering

Er-doped Si-rich silica layers were obtained by reactive magnetron sputtering and both structural and room-temperature photoluminescence properties were investigated. The controlled introduction of hydrogen in the plasma was found to play a critical role in the microstructure and distribution of the...

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Bibliographic Details
Published in:Journal of applied physics 2003-09, Vol.94 (6), p.3869-3874
Main Authors: Gourbilleau, F., Dufour, C., Levalois, M., Vicens, J., Rizk, R., Sada, C., Enrichi, F., Battaglin, G.
Format: Article
Language:English
Subjects:
Chemical Sciences
Computational Physics
Condensed Matter
Electromagnetism
Engineering Sciences
Material chemistry
Materials
Materials Science
Micro and nanotechnologies
Microelectronics
Optics
Photonic
Physics
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Summary:Er-doped Si-rich silica layers were obtained by reactive magnetron sputtering and both structural and room-temperature photoluminescence properties were investigated. The controlled introduction of hydrogen in the plasma was found to play a critical role in the microstructure and distribution of the Si nanograins formed after annealing. Concomitant density increase and size decrease of these nanograins mostly amorphous were noticed upon increasing the hydrogen partial pressure in the plasma. This was accompanied by a systematic enhancement of the Er emission indicating that both crystallized and amorphous silicon nanoparticles are similarly efficient sensitizers for Er emission. The lifetime of the latter was found as high as 5–6 ms.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1604479