Towards multiscale modeling of si nanocrystals LPCVD deposition on SiO2 : From ab initio calculations to reactor scale simulations

• Published in: Surface & coatings technology 2007-09, Vol.201 (22-23), p.8854-8858
• Main Authors: ZAHI, I, VERGNES, H, CAUSSAT, B, ESTEVE, A, DJAFARI ROUHANI, M, MUR, P, BLAISE, P, SCHEID, E
• Format: Article
• Language: English
• Subjects: Chemical engineering; Chemical Sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2007.04.127

A modeling study is presented involving calculations at continuum and atomistic (DFT, Density Functional Theory) levels so as to better understand mechanisms leading to silicon nanocrystals (NC) nucleation and growth on SiO2 silicon dioxide surface, by Low Pressure Chemical Vapor Deposition (LPCVD) from silane SiH4. Calculations at the industrial reactor scale show that a promising way to improve reproducibility and uniformity of NC deposition at short term could be to increase deposition time by highly diluting silane in a carrier gas. This dilution leads to a decrease of silane deposition rate and to a marked increase of the contribution to deposition of unsaturated species such as silylene SiH2. This result gives importance to our DFT calculations since they reveal that only silylene (and probably other unsaturated species) are involved in the very first steps of nucleation i.e. silicon chemisorption on silanol Si-OH or siloxane Si-O-Si bonds present on SiO2 substrates. Saturated molecules such as silane could only contribute to NC growth, i.e. chemisorption on already deposited silicon bonds, since their decomposition activation barriers on SiO2 surface are as high as 3eV.