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Multiscale approach for modeling magnetization properties of inhomogeneous ultrathin magnetic layers
We report on spin atomistic calculations used to model static and dynamic magnetic properties of inhomogeneous ultrathin iron films. Active magnetic layers in next-generation spintronic devices are becoming so thin that they exhibit some variable degree of roughness at the low-scale making them magn...
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Published in: | Physical review. B 2024-10, Vol.110 (14), Article 144427 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | We report on spin atomistic calculations used to model static and dynamic magnetic properties of inhomogeneous ultrathin iron films. Active magnetic layers in next-generation spintronic devices are becoming so thin that they exhibit some variable degree of roughness at the low-scale making them magnetically inhomogeneous. We propose a multiscale approach to progressively shift from a rough atomic-scale system to an ensemble of macrospins. By studying nanoscale islands of atoms in contact with each other, we demonstrate that ultrathin rough layers can be described by a set of macrospins coupled by a Heisenberg-like exchange interaction driven by the existence and shape of nanoconstrictions linking the islands. We show that the magnetization dynamics at 0 K is strongly impacted by this surface morphology since the resonant frequency of a typical ultrathin iron layer can drop by up to an order of magnitude due to inhomogeneities. Additionally, we used Monte Carlo simulations to determine the ferromagnetic-paramagnetic and spin reorientation transition temperatures for various morphology parameters and we show how nanoconstrictions and shapes of the atomic clusters can modify these transition temperatures. Our results demonstrate the possibility to account for the morphology of ultrathin structures with significant roughness. We believe that our approach makes it possible to model complete devices as close as possible to experimental reality. |
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ISSN: | 2469-9950 2469-9969 |
DOI: | 10.1103/PhysRevB.110.144427 |