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Performance Trade-Off of RFSOI Switches Under Scaled Bias Conditions
Over the years, RFSOI has emerged as dominant technology for building RF FEM modules with optimum cost and performance. RFSOI switches are typically designed using thick gate oxides with biasing up to 3. 3V to deliver minimum RON x COFF. With the strong push of operating digital devices at lower vol...
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| creator | Dhar, Siddhartha Monfray, Stephane Gianesello, Frederic Julien, Franck Dura, Julien Legrand, Charles-Alex Amouroux, Julien Gros, Bernadette Welter, Loic Charbuillet, Clement Cathelin, Philippe Canderle, Elodie Vulliet, Nathalie Escolier, Emmanuel Antunes, Lucas Rouchouze, Eric Fornara, Pascal Rivero, Christian Bertrand, Guillaume Chevalier, Pascal Regnier, Arnaud Gloria, Daniel Fleury, Alain |
| description | Over the years, RFSOI has emerged as dominant technology for building RF FEM modules with optimum cost and performance. RFSOI switches are typically designed using thick gate oxides with biasing up to 3. 3V to deliver minimum RON x COFF. With the strong push of operating digital devices at lower voltages, it would become necessary to evaluate the performance of the switch under such operating conditions. In this paper, we analyze the impact of RON x COFF of the switch in 200mm RFSOI technology, under scaled bias conditions and propose path for device optimization. |
| doi_str_mv | 10.1109/SiRF56960.2023.10046146 |
| format | conference_proceeding |
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| identifier | EISSN: 2474-9761 |
| ispartof | 2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2023, p.38-40 |
| issn | 2474-9761 |
| language | eng |
| recordid | cdi_ieee_primary_10046146 |
| source | IEEE Xplore All Conference Series |
| subjects | Logic gates Low voltage operation Monolithic integrated circuits Performance evaluation Personal digital devices Radio frequency RF switches Silicon SOI Switches |
| title | Performance Trade-Off of RFSOI Switches Under Scaled Bias Conditions |
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