Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at Vd = 12 V

In this letter, we present high-performance tri-gate normally-off HEMTs RF power devices using MOCVD-grown thin barrier SiN/AlN/GaN heterostructures. The normally-off devices exhibit alloyed Ohmic contact resistance of about 0.35 \Omega \cdot mm, low threshold-voltage of 0.2 V, very high output cur...

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Bibliographic Details
Published in:IEEE electron device letters 2023-04, Vol.44 (4), p.590-593
Main Authors: Guo, Jingshu, Zhu, Jiejie, Liu, Siyu, Cheng, Kai, Zhu, Qing, Wang, Pengfei, Liu, Kai, Zhao, Ziyue, Qin, Lingjie, Zhou, Yuxi, Mi, Minhan, Hao, Yue, Ma, Xiaohua
Format: Article
Language:English
Subjects:
AlN/GaN
HEMTs
high-electron-mobility transistors (HEMTs)
III-V semiconductor materials
Logic gates
MODFETs
normally-off
Oxidation
Plasmas
Radio frequency
tri-gate
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