High-Voltage ( > 1.2 kV) AlGaN/GaN Monolithic Bidirectional HEMTs With Low On-Resistance (2.54 m \Omega \cdot\text^} )

High-voltage ( > 1.2 kV) bidirectional AlGaN/ GaN HEMTs were fabricated with low ON-resistance of \sim \text{10} \Omega \cdot\text{mm} or specific ON-resistance of 2.54 m \Omega\cdot\text{cm}^{\text{2}} . Two field plates with variable lengths were utilized on each side to experimentally op...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2024-01, Vol.71 (1), p.1-6
Main Authors: Alam, Md Tahmidul, Chen, Jiahao, Bai, Ruixin, Pasayat, Shubhra S., Gupta, Chirag
Format: Article
Language:English
Subjects:
2-D electron gas (2DEG)
field plate
monolithic bidirectional GaN HEMT
TCAD
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