Backside Power Delivery with relaxed overlay for backside patterning using extreme wafer thinning and Molybdenum-filled slit nano Through Silicon Vias

Long slit nano Through Silicon Vias (nTSV) are used for high density connections between frontside (FS)-patterned Burried Power Rails (BPR) and orthogonally patterned metal rails on the wafer backside (BS). The length of the slits can be tuned to relax overlay requirements for BS patterning that are...

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Bibliographic Details
Main Authors: Zhao, P., Witters, L., Jourdain, A., Stucchi, M., Jourdan, N., Maes, J.W., Bana, H., Zhu, C., Chukka, R., Sebaai, F., Vandersmissen, K., Heylen, N., Montero, D., Wang, S., D'Have, K., Schleicher, F., De Vos, J., Beyer, G., Miller, A., Beyne, E.
Format: Conference Proceeding
Language:English
Subjects:
Filling
Kelvin
Rails
Resistance
Silicon
Tin
Very large scale integration
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Summary:Long slit nano Through Silicon Vias (nTSV) are used for high density connections between frontside (FS)-patterned Burried Power Rails (BPR) and orthogonally patterned metal rails on the wafer backside (BS). The length of the slits can be tuned to relax overlay requirements for BS patterning that are typically stringent due to wafer grid distortions in bonding. Extreme wafer thinning stopping on 10nm Si o . 75 Geo.25 etch stop layer (ESL) is enabled using an optimized thinning sequence. For the first time, low resistance barrier-free Molybdenum (Mo)-filled nTSVs are demonstrated, confirming the potential for further scaling compared to TiN/W filled counterparts.
ISSN:2158-9682
DOI:10.1109/VLSITechnologyandCir46783.2024.10631441