A Submillimeter-Wave HEMT Amplifier Module With Integrated Waveguide Transitions Operating Above 300 GHz

• Published in: IEEE transactions on microwave theory and techniques 2008-06, Vol.56 (6), p.1380-1388
• Main Authors: Samoska, L., Deal, W.R., Chattopadhyay, G., Pukala, D., Fung, A., Gaier, T., Soria, M., Radisic, V., Mei, X., Lai, R.
• Format: Article
• Language: English
• Subjects: Amplifier; Amplifiers; Applied sciences; Channels; Chips (electronics); Circuit properties; Design; Design. Technologies. Operation analysis. Testing; Distributed parameter circuits; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Frequency; Frequency ranges; HEMT; HEMTs; Integrated circuits; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; millimeter wave; Modules; Monolithic integrated circuits; monolithic millimeter-wave integrated circuit (MMIC); Probes; Process design; Radiofrequency amplifiers; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; sub-millimeter wave; Submillimeter wave integrated circuits; Submillimeter wave propagation; Transmission lines; Waveguide transitions; Waveguides
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2008.923353

In this paper, we report on the first demonstration of monolithically integrated waveguide transitions in a submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module. We designed the module for a targeted frequency range of 300-350 GHz, using WR2.2 for the input and output waveguides. The waveguide module utilizes radial -plane transitions from S-MMIC to waveguide. We designed back-to-back radial probe transitions separated by thru transmission lines to characterize the module, and have incorporated the radial -plane transitions with an S-MMIC amplifier, fabricated monolithically as a single chip. The chip makes use of an S-MMIC process and amplifier design from the Northrop Grumman Corporation, Redondo Beach, CA, using 35-nm gate-length InP transistors. The integrated module design eliminates the need for wire bonds in the RF signal path, and enables a drop-in approach for minimal assembly. The waveguide module includes a channel design, which optimizes the -plane probe bandwidth to compensate for an S-MMIC width, which is larger than the waveguide dimension, and is compatible with S-MMIC fabrication and design rules. This paper demonstrates for the first time that waveguide-based S-MMIC amplifier modules with integrated waveguide transitions can be successfully operated at submillimeter-wave frequencies.