Realizing the full potential of silicon carbide power devices

Silicon carbide (SiC) MOSFET power devices are expected to replace silicon IGBTs in power electronics applications requiring higher efficiency and power density, as well as capability to operate at higher temperatures. This paper reports on the development of high efficiency SiC power MOSFETs, power...

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Bibliographic Details
Main Authors: Stevanovic, L, Matocha, K, Stum, Z, Losee, P, Gowda, A, Glaser, J, Beaupre, R
Format: Conference Proceeding
Language:English
Subjects:
Insulated gate bipolar transistors
Logic gates
MOSFET circuits
Schottky diodes
Silicon carbide
Switches
Switching loss
Online Access:Request full text
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Summary:Silicon carbide (SiC) MOSFET power devices are expected to replace silicon IGBTs in power electronics applications requiring higher efficiency and power density, as well as capability to operate at higher temperatures. This paper reports on the development of high efficiency SiC power MOSFETs, power modules and switching converters at GE. The prototype 30A, 1200V discrete devices have on-resistance below 50 mΩ and the total switching energy of 0.6 mJ, offering performance superior to any competing 1200V devices. A back-to-back buck-boost converter was built using 15A MOSFETs and experimental results are presented. The 15A devices were also used for fabrication of 150A all-SiC modules. The modules have 10 mΩ on-resistance and the total switching energy is 3.3 mJ, both significantly better than competing designs. The results demonstrate the full potential of the SiC devices for power conversion applications.
ISSN:1093-5142
DOI:10.1109/COMPEL.2010.5562412