Uniform and high performance of monolithically integrated 1/spl times/12 array of planar GaInAs photodiodes

In this article, we describe the fabrication of a monolithically integrated 1/spl times/12 array of GaInAs/InP planar photodiodes, which has highly uniform characteristics in dark current, capacitance and crosstalk capacitance, quantum efficiency, and the frequency bandwidth at 3-dB reduction with a...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1997-04, Vol.44 (4), p.559-564
Main Authors: Wen-Jeng Ho, Meng-Chyi Wu, Yuan-Kuang Tu
Format: Article
Language:English
Subjects:
Bandwidth
Crosstalk
Dark current
Diodes
Fabrication
Frequency
Indium phosphide
Photodiodes
Quantum capacitance
Voltage
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!