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Impact Of Boron Penetration On Gate Oxide Reliability And Device Lifetime In P+-poly PMOSFETs
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| container_end_page | 187 |
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| container_start_page | 182 |
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| creator | Kim, B.Y. Liu, I.M. Min, B.W. Luan, H.F. Gardner, M. Fulford, J. Kwong, D.L. |
| description | |
| doi_str_mv | 10.1109/VTSA.1997.614754 |
| format | conference_proceeding |
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| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1524-766X |
| ispartof | Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications, 1997, p.182-187 |
| issn | 1524-766X 2690-8174 |
| language | eng |
| recordid | cdi_ieee_primary_614754 |
| source | IEEE Xplore All Conference Series |
| subjects | Boron CMOS process Degradation Design for quality Furnaces Microelectronics MOSFETs Stress Temperature dependence Threshold voltage |
| title | Impact Of Boron Penetration On Gate Oxide Reliability And Device Lifetime In P+-poly PMOSFETs |
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