Effect of Asymmetric Channel on Charging Behavior of 22-nm Quantum-Dot Floating-Gate Flash Memory Cell

The need of high density, high speed, and reliable memories is leading toward the development of new approaches such as quantum-dot floating gates (QDFGs), use of high- k dielectrics as tunneling/control gate oxides, and metal-gate technology. QDFG 22-nm Flash memory cells based on these new approac...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2012-09, Vol.59 (9), p.2550-2554
Main Authors: Shrirao, Ashwini, Gautam, Rashmi, Patrikar, Rajendra M.
Format: Article
Language:English
Subjects:
22-nm technology
Applied sciences
Asymmetric channel
Cross-disciplinary physics: materials science
rheology
Design. Technologies. Operation analysis. Testing
Doping
Electronics
Exact sciences and technology
Flash memory cell
Flash memory cells
Integrated circuits
Integrated circuits by function (including memories and processors)
Logic gates
Magnetic and optical mass memories
Materials science
Nanoscale materials and structures: fabrication and characterization
Physics
Programming
quantum dot
Quantum dots
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Threshold voltage
Tunneling
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Summary:The need of high density, high speed, and reliable memories is leading toward the development of new approaches such as quantum-dot floating gates (QDFGs), use of high- k dielectrics as tunneling/control gate oxides, and metal-gate technology. QDFG 22-nm Flash memory cells based on these new approaches are investigated through process and device simulations using Synopsys Technology Computer-Aided Design tools. Hafnium oxide is used as both tunneling and control gate oxides along with the metal control gate. As a solution to the nonuniform charging of QDFGs in these structures, asymmetric doping of the channel region is proposed. The effect of asymmetric channel doping on the charging behavior of QDFGs is studied, and the device characteristics are compared with symmetric channel counterpart. The simulation results confirm that the asymmetric channel device is faster in terms of programming and erasing time than the symmetric channel device.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2204999