Analyzing the optimal ratio of SRAM banks in hybrid caches

• Main Authors: Valero, A., Sahuquillo, J., Petit, S., Lopez, P., Duato, J.
• Format: Conference Proceeding
• Language: English
• Subjects: Arrays; Capacitors; Energy consumption; Program processors; Random access memory; Silicon
• ISSN: 1063-6404; 2576-6996
• DOI: 10.1109/ICCD.2012.6378655

Cache memories have been typically implemented with Static Random Access Memory (SRAM) technology. This technology presents a fast access time but high energy consumption and low density. As opposite, the recently appeared embedded Dynamic RAM (eDRAM) technology allows caches to be built with lower energy and area, although with a slower access time. The eDRAM technology provides important leakage and area savings, especially in huge Last-Level Caches (LLCs), which occupy almost half the silicon area in some recent microprocessors. This paper proposes a novel hybrid LLC, which combines SRAM and eDRAM banks to address the trade-off among performance, energy, and area. To this end, we explore the optimal percentage of SRAM and eDRAM banks that achieves the best target trade-off. Architectural mechanisms have been devised to keep the most likely accessed blocks in fast SRAM banks as well as to avoid unnecessary destructive reads. Experimental results show that, compared to a conventional SRAM LLC with the same storage capacity, performance degradation does not surpass, on average, 2.9% (even with 12.5% of banks built with SRAM technology), whereas area savings can be as high as 46% for a 1MB-16way LLC. For a 45nm technology node, the energy-delay squared product confirms that a hybrid cache is a better design than the conventional SRAM cache regardless the number of eDRAM banks, and also better than a conventional eDRAM cache when the number of SRAM banks is a quarter or an eighth of the cache banks.