Physical modeling of voltage-driven resistive switching in oxide RRAM

• Main Authors: Ielmini, D., Larentis, S., Balatti, S.
• Format: Conference Proceeding
• Language: English
• Subjects: Analytical models; Electrical resistance measurement; Integrated circuits; Numerical models; Resistance; Switches; Voltage measurement
• ISSN: 1930-8841; 2374-8036
• DOI: 10.1109/IIRW.2012.6468905

Resistive switching random access memory (RRAM) offers fast switching, high endurance and CMOS-compatible integration. Although functional devices below 10 nm have been already demonstrated, assessing the ultimate scaling of RRAM requires a detailed understanding and modeling of switching and reliability processes. This work discusses the modeling of bipolar switching in RRAM. An analytical model is first introduced to describe the temperature- and field-accelerated growth of the conductive filament (CF) induced by ion migration. The analytical model accounts for time-resolved data of the set transition, highlighting the central role of voltage as the driving parameter for set/reset transitions. The analytical model also accounts for the switching parameters as a function of the compliance current. A numerical model is then presented, allowing for a detailed description of the gradual increase during the reset transition. The numerical model highlights the different CF morphology in programmed states obtained by either set or reset. The improved insight into the switching process and the newly developed simulation tools enable device design, reliability prediction and materials engineering in RRAM.