Fast ionization dynistor (FID)-a new semiconductor superpower closing switch

The fastest known semiconductor electrically triggering power closing switches have turn-on times about tens of nanoseconds at /spl sim/1 kV blocking voltage and hundreds of amperes switching current. Any attempts to increase the device voltage lead to the increase of the device thickness and turn-o...

Full description

Saved in:
Bibliographic Details
Main Authors: Efanov, V.M., Karavaev, V.V., Kardo-Sysoev, A.F., Tchashnikov, I.G.
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
Circuits
Current measurement
Delay effects
Inductors
Ionization
Power measurement
Power semiconductor switches
Stability
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The fastest known semiconductor electrically triggering power closing switches have turn-on times about tens of nanoseconds at /spl sim/1 kV blocking voltage and hundreds of amperes switching current. Any attempts to increase the device voltage lead to the increase of the device thickness and turn-on times. These limitations may be overpassed using the effect of delayed ionization. This effect has been used to develop new power superfast devices-fast ionization dynistors (FID). Like thyristors they have two steady states: nonconducting and high-conducting. The fast (about 1 ns) transition from nonconducting state to high-conducting state is induced by application of short (nanoseconds) high voltage pulse to the blocking p-n junction of multilayer n-p-n-p semiconductor structure. Due to the regenerative feedback, FID may remain in the high-conducting state infinitely.
DOI:10.1109/PPC.1997.674523