A detailed physical model for ion implant induced damage in silicon

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF/sub 2/, and boron implants into single-crystal silicon. In addition, the amorp...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1998-06, Vol.45 (6), p.1226-1238
Main Authors: Tian, S., Morris, M.F., Morris, S.J., Obradovic, B., Geng Wang, Tasch, A.F., Snell, C.M.
Format: Article
Language:English
Subjects:
Amorphous materials
Boron
Computational modeling
Implants
Impurities
Ion implantation
Physics
Predictive models
Silicon
Thickness measurement
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Summary:A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF/sub 2/, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the UT-MARLOWE ion implantation simulator, and has been developed primarily for use in engineering workstations. This damage model is the most physical model in the literature to date within the framework of the binary collision approximation (BCA), and provides the required, accurate as-implanted impurity profiles and damage profiles for transient enhanced diffusion (TED) simulation.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.678523