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Thermionic-Field Emission Barrier Between Nanocrystalline Diamond and Epitaxial 4H-SiC

A novel Schottky-like rectifying heterojunction between two low-doped widebandgap semiconductors is presented. The conduction mechanism of p-type nanocrystalline diamond and n-type 4H-SiC with a near-unity ideality factor was determined via two-terminal current-voltage measurements as a function of...

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Bibliographic Details
Published in:IEEE electron device letters 2014-12, Vol.35 (12), p.1173-1175
Main Authors: Tadjer, Marko J., Hobart, Karl D., Anderson, Travis J., Feygelson, Tatyana I., Myers-Ward, Rachael L., Koehler, Andrew D., Calle, Fernando, Eddy, Charles R., Gaskill, D. Kurt, Pate, Bradford B., Kub, Fritz J.
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Language:English
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Summary:A novel Schottky-like rectifying heterojunction between two low-doped widebandgap semiconductors is presented. The conduction mechanism of p-type nanocrystalline diamond and n-type 4H-SiC with a near-unity ideality factor was determined via two-terminal current-voltage measurements as a function of temperature and SiC doping concentration. I-V characteristics at 300 and 510 K were fit at low forward bias with good agreement using thermionic emission theory. A wide temperature range ideality factor analysis revealed a thermionic-field rectifying barrier to low-doped and moderately doped SiC epilayers, which could lead to improved contacts for SiC-based piezoresistors, resonators, and microelectromechanical systems.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2364596