A new technique for determining long-term TDDB acceleration parameters of thin gate oxides

A new technique, the dual voltage versus time curve (V-t) integration technique, is presented as a much faster method to obtain time-dependent dielectric breakdown (TDDB) acceleration parameters (/spl alpha/ and /spl tau/) of ultrathin gate oxides compared to conventional long-term constant voltage...

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Bibliographic Details
Published in:IEEE electron device letters 1998-07, Vol.19 (7), p.219-221
Main Authors: Yuan Chen, Suehle, J.S., Chih-Chieh Shen, Bernstein, J.B., Messick, C., Chaparala, P.
Format: Article
Language:English
Subjects:
Acceleration
Breakdown voltage
Current measurement
Dielectric breakdown
Dielectric measurements
Electric breakdown
Life estimation
Production
Stress
Testing
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