State Asymmetry Driven State Remapping in Phase Change Memory

Phase change memory (PCM) is one of the most promising candidates to replace DRAM as main memory in deep submicron regime. Regardless of single-level or multiple-level cells, the programming costs to each state exhibit significant asymmetries in latency, energy and endurance. In this paper, we explo...

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Bibliographic Details
Published in:IEEE transactions on computer-aided design of integrated circuits and systems 2017-01, Vol.36 (1), p.27-40
Main Authors: Mengying Zhao, Yuan Xue, Jingtong Hu, Chengmo Yang, Tiantian Liu, Zhiping Jia, Xue, Chun Jason
Format: Article
Language:English
Subjects:
Asymmetry
Cost analysis
Cost reduction
Dynamic programming
Dynamic random access memory
Effectiveness
energy
Energy costs
Fatigue tests
Optimization
Phase change materials
phase change memory (PCM)
Programming
Random access memory
Reliability
Resistance
state remapping
wear
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