Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance-Part II: Model Validation

In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelectric thickness scaling and temperature effects. Interestingly, we find that an NCFET with PZT ferroe...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-12, Vol.63 (12), p.4986-4992
Main Authors: Pahwa, Girish, Dutta, Tapas, Agarwal, Amit, Khandelwal, Sourabh, Salahuddin, Sayeef, Hu, Chenming, Chauhan, Yogesh Singh
Format: Article
Language:English
Subjects:
Capacitance
Circuits
Compact modeling
ferroelectric
Ferroelectric materials
Ferroelectricity
Field effect transistors
MOSFET
negative capacitance
negative capacitance FET (NCFET)
negative differential resistance (NDR)
Semiconductor device modeling
Temperature effects
Thickness
Transient analysis
transients
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