Erasing-Modes Dependent Performance of a-IGZO TFT Memory With Atomic-Layer-Deposited Ni Nanocrystal Charge Storage Layer

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) memory devices are fabricated with plasma-assisted atomic-layer-deposition (ALD) charge storage medium of high-density Ni nanocrystals (NCs). The effect of Al2O3 tunneling layer thickness (i.e., 8 and 12 nm) on the memory charac...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-07, Vol.64 (7), p.3023-3027
Main Authors: Shi-Bing Qian, Yan Shao, Wen-Jun Liu, Wei Zhang, David, Shi-Jin Ding
Format: Article
Language:English
Subjects:
Aluminum oxide
Charge deposition
Data storage
Degradation
Electric charge
Erasingmodes
Extrapolation
In–Ga–Zn–O
Logic gates
Memory devices
Nanocrystals
Ni nanocrystals (NCs)
Nickel
nonvolatile memory
Performance evaluation
Plasmas (physics)
Programming
Semiconductor devices
Storage capacity
Thin film transistors
thin-film transistor (TFT)
Tunneling
Zinc oxide
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Summary:Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) memory devices are fabricated with plasma-assisted atomic-layer-deposition (ALD) charge storage medium of high-density Ni nanocrystals (NCs). The effect of Al2O3 tunneling layer thickness (i.e., 8 and 12 nm) on the memory characteristics is investigated. The results indicate that the 8-nm tunneling layer device shows a programming window as large as 4.7 V after 5-ms programming at 18 V, reflecting that the ALD Ni NCs have a high charge storage capacity. To achieve a high erasing efficiency, different erasing modes are explored, including electrical erasing, monochromatic light (ML) erasing, and ML-assisted electrical erasing. It is demonstrated that the ML-assisted electrical erasing can attain the highest erasing efficiency, e.g., an erasing window as large as 9.11 V is obtained after 100-s ML (300 nm)-assisted electrical erasing at -20 V for the 8-nm tunneling layer. Based on the above programming and erasing conditions, the ten-year memory window is extrapolated to be 4.7 V at room temperature. Though increasing the tunneling layer thickness may enhance the data retention, it also degrades the programming and erasing efficiencies slightly.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2702702