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A Physical Unclonable Function With Redox-Based Nanoionic Resistive Memory

Emerging non-volatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) exhibit a unique set of characteristics that make them promising candidates for the next generation of low-cost, low-power, tiny, and secure physical unclonable functions (PUFs). Their underlying stochastic...

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Bibliographic Details
Published in:IEEE transactions on information forensics and security 2018-02, Vol.13 (2), p.437-448
Main Authors: Jeeson Kim, Ahmed, Taimur, Nili, Hussein, Jiawei Yang, Doo Seok Jeong, Beckett, Paul, Sriram, Sharath, Ranasinghe, Damith C., Kavehei, Omid
Format: Article
Language:English
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Summary:Emerging non-volatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) exhibit a unique set of characteristics that make them promising candidates for the next generation of low-cost, low-power, tiny, and secure physical unclonable functions (PUFs). Their underlying stochastic ionic conduction behavior, intrinsic nonlinear current-voltage characteristics, and their well-known nano-fabrication process variability might normally be considered disadvantageous ReRAM features. However, using a combination of a novel architecture and special peripheral circuitry, this paper exploits these non-idealities in a physical one-way function, nonlinear resistive PUF, potentially applicable to a variety of cyber-physical security applications. We experimentally verify the performance of valency change mechanism (VCM)-based ReRAM in nano-fabricated crossbar arrays across multiple dies and runs. In addition to supporting a massive pool of challenge-response pairs (CRPs), using a combination of experiment and simulation our proposed PUF exhibits a reliability of 98.67%, a uniqueness of 49.85%, a diffuseness of 49.86%, a uniformity of 47.28%, and a bit-aliasing of 47.48%.
ISSN:1556-6013
1556-6021
DOI:10.1109/TIFS.2017.2756562