A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs

This paper presents an accurate quasi-physical compact large-signal model for GaN high electron mobility transistors (HEMTs). The drain current I ds expression is acquired by combining the zone division method and the surface potential theory. The proposed I ds model only contains 19 empirical param...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2017-12, Vol.65 (12), p.5113-5122
Main Authors: Wen, Zhang, Xu, Yuehang, Chen, Yongbo, Tao, Hongqi, Ren, Chunjiang, Lu, Haiyan, Wang, Zhensheng, Zheng, Weibin, Zhang, Bin, Chen, Tangsheng, Gao, Tao, Xu, Ruimin
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Ambient temperature
Circuit design
Electric potential
Electron mobility
Gallium nitride
GaN high-electron mobility transistors (HEMTs)
Heating
HEMTs
High electron mobility transistors
Integrated circuit modeling
large-signal modeling
Mathematical model
Mathematical models
MODFETs
Potential theory
scalable
Semiconductor devices
surface-potential
Temperature effects
Transistors
Trapping
trapping effects
Wide band gap semiconductors
zone division
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Summary:This paper presents an accurate quasi-physical compact large-signal model for GaN high electron mobility transistors (HEMTs). The drain current I ds expression is acquired by combining the zone division method and the surface potential theory. The proposed I ds model only contains 19 empirical parameters, with self-heating, ambient temperature and trapping effects considered. The self-heating effects are modeled by a polynomial function of temperature and gate voltage for the critical electric field E c . And the ambient temperature effects are modeled by modifying pinchoff voltage and maximal electron saturated velocity. The trapping effects are considered with an effective gate-source voltage method. Moreover, taking the advantage of good physical meaning, the proposed I ds model is scalable. In house 0.15-μm GaN HEMTs with different sizes are used to validate the model by dc I-V over a wide ambient temperature range, pulsed I-V, multibias S-parameters up to 50 GHz and multibias large-signal characteristics at f 0 = 30 GHz. The good results show that the proposed quasiphysical zone division model is useful for millimeter-wave GaN HEMTs development and circuit design.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2017.2765326