Modeling, Simulation, Fabrication, and Characterization of a 10- \mu W/cm2 Class Si-Nanowire Thermoelectric Generator for IoT Applications

• Published in: IEEE transactions on electron devices 2018-11, Vol.65 (11), p.5180-5188
• Main Authors: Tomita, Motohiro, Oba, Shunsuke, Himeda, Yuya, Yamato, Ryo, Shima, Keisuke, Kumada, Takehiro, Xu, Mao, Takezawa, Hiroki, Mesaki, Kohhei, Tsuda, Kazuaki, Hashimoto, Shuichiro, Zhan, Tianzhuo, Zhang, Hui, Kamakura, Yoshinari, Suzuki, Yuhhei, Inokawa, Hiroshi, Ikeda, Hiroya, Matsukawa, Takashi, Matsuki, Takeo, Watanabe, Takanobu
• Format: Article
• Language: English
• Subjects: CMOS process; energy harvesting; Generators; Heating systems; Integrated circuit modeling; Mathematical model; Resistance; scalability; Si nanowire (NW); Silicon; Substrates; thermoelectric (TE) generator
• ISSN: 0018-9383
• DOI: 10.1109/TED.2018.2867845

We propose a planar device architecture compatible with the CMOS process technology as the optimal current benchmark of a Si-nanowire (NW) thermoelectric (TE) power generator. The proposed device is driven by a temperature gradient that is formed in the proximity of a perpendicular heat flow to the substrate. Therefore, unlike the conventional TE generators, the planar short Si-NWs need not be suspended on a cavity structure. Under an externally applied temperature difference of 5 K, the recorded TE power density is observed to be 12~\mu \text{W} /cm 2 by shortening the Si-NWs length and suppressing the parasitic thermal resistance of the Si substrate. The demonstration paves a pathway to develop cost-effective autonomous internet-of-things applications that utilize the environmental and body heats.