Monte Carlo simulation of noncubic symmetry semiconducting materials and devices

In this paper, we discuss the complexities that arise in Monte Carlo based modeling of noncubic symmetry semiconductors and their related devices. We have identified three general issues, band structure, scattering mechanisms, and band intersections that require some modification of the Monte Carlo...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2000-10, Vol.47 (10), p.1882-1890
Main Authors: Brennan, K.F., Bellotti, E., Farahmand, M., Nilsson, H.-E., Ruden, P.P., Yumin Zhang
Format: Article
Language:English
Subjects:
Band structure of solids
charge transport
Complexity
Computer simulation
Devices
Electrical engineering, electronics and photonics
Elektroteknik, elektronik och fotonik
Intersections
Monte Carlo methods
Monte Carlo simulation
Semiconductor device modeling
Semiconductors
Symmetry
TECHNOLOGY
TEKNIKVETENSKAP
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, we discuss the complexities that arise in Monte Carlo based modeling of noncubic symmetry semiconductors and their related devices. We have identified three general issues, band structure, scattering mechanisms, and band intersections that require some modification of the Monte Carlo simulator from that for cubic symmetry. Owing to the increased size and number of atoms per unit cell, the band structure is far more complex in noncubic than in zincblende phase semiconductors. This added complexity is reflected by the greater number of bands, smaller Brillouin zone and concomitant increase in the number of band intersections. We present strategies for modeling the effects of band intersections on the carrier dynamics using the Monte Carlo method. It is found that the band intersection points greatly affect the carrier transport, most dramatically in the determination of the impact ionization and breakdown properties of devices and bulk material. Excellent agreement with experimental measurements of the impact ionization coefficients is obtained only when treatment of the band intersections is included within the model.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.870567