Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer

• Published in: IEEE transactions on electron devices 2019-11, Vol.66 (11), p.4759-4763
• Main Authors: Zhou, Xianda, Lu, Lei, Wang, Kai, Wong, Man, Sin, Johnny K. O., Kwok, Hoi-Sing
• Format: Article
• Language: English
• Subjects: Amorphous oxide semiconductors (AOSs); Bilayers; Diodes; Electric breakdown; Electrons; Gallium; Indium; Indium gallium zinc oxide; indium-tin-zinc-oxide (ITZO)/indium-gallium-zinc-oxide (IGZO); Junctions; Low temperature; Metals; Platinum; power semiconductor devices; Production costs; Schottky barriers; Schottky diodes; Self alignment; Single crystals; Substrates; thin-film transistors (TFTs); Zinc plating
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2019.2940720

A Schottky diode based on amorphous wide bandgap oxide semiconductor is experimentally demonstrated with reasonable performance. The Schottky barrier is formed between the room-temperature sputtered amorphous indium-tin-zinc-oxide/indium-gallium-zincoxide bilayer and platinum, and a highly-resistive, selfaligned junction termination region is implemented at only 280 °C. Due to such low-temperature process, oxide-based Schottky diode is very attractive in terms of low manufacturing cost and back-end-of-line (BEOL) integration compatibility. The proposed Schottky diode has an ideality factor of 1.2 and a high rectification ratio of 1 × 10 9 at ±1.5 V. The extracted specific ON -resistance is 7.8 mΩ·mm 2 , and the breakdown voltage is 26.4 V. With approximately the same Baliga's figure-of-merit as that of the single-crystal silicon counterparts, the proposed Schottky diode is therefore promising for power electronic applications.