Miller-Capacitance Analysis of High-Voltage MOSFETs and Optimization Strategies for LowPower Dissipation

High voltage MOSFETs are widely used for bias ranges of a few dozens of volts to a few hundred of volts. The trench-type MOSFET is one of the key devices for realizing this wide range applications. However, the device characteristics are not yet well understood, especially, the Miller-capacitance va...

Full description

Saved in:
Bibliographic Details
Main Authors: Iizuka, Takahiro, Miura-Mattausch, Mitiko, Navarro, Dondee Serveza, Kikuchihara, Hideyuki, Umeda, Takuya, Mattausch, Hans Jurgen, Yamamoto, Takao
Format: Conference Proceeding
Language:English
Subjects:
analytical model
Analytical models
Capacitance
High voltage MOSFETs
High-voltage techniques
Miller capacitance
MOSFET
Semiconductor device modeling
Semiconductor process modeling
super junction
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:High voltage MOSFETs are widely used for bias ranges of a few dozens of volts to a few hundred of volts. The trench-type MOSFET is one of the key devices for realizing this wide range applications. However, the device characteristics are not yet well understood, especially, the Miller-capacitance variation for different device structures is still mysterious. Here we show, that the capacitance variation is very much dependent on the applied device structure. An observed capacitance increase as a function of V ds , contrary to the conventional decreasing trend, is due to the large induced field within the highly resistive drift region. A narrow width of the drift region in a super-junction structure will easily become fully depleted, due to the junction between drift and pillar region of the substrate, which causes a fully depleted condition. This full-depletion situation induces a high field within the drift region, resulting in a potential increase even at the gate oxide.
ISSN:1946-1577
DOI:10.1109/SISPAD54002.2021.9592591