KrF excimer laser annealing with an ultra-low laser fluence for enabling ferroelectric Hf0.5Zr0.5O2

In this letter, we report the KrF excimer laser annealing for achieving high-performance ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO). The laser anneals the target device layer effectively with a high heating/cooling rate without overheating under-layer deep structures. The impact of laser fluence, number...

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Bibliographic Details
Published in:IEEE electron device letters 2023-01, p.1-1
Main Authors: Chen, Li, Song, Wendong, Wang, Weijie, Lee, Hock Koon, Chen, Zhixian, Zhao, Wenting, Zhu, Yao
Format: Article
Language:English
Subjects:
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<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">Hf 0.5 Zr 0.5 O 2
<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">KrF excimer laser
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Annealing
Capacitors
Laser beams
Laser stability
Lasers
Temperature distribution
Tin
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