An Emerging Local Annealing Method for Simultaneous Crystallization and Activation in Xtacking 3-D NAND Flash

The high thermal budget of three-dimensional NAND Flash (3D NAND Flash) is the key issue limiting the increase in vertical integration. The main purpose of this article is to design a local and high temperature annealing function to reduce the thermal budget and gain a high activation rate without d...

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Bibliographic Details
Published in:IEEE transactions on semiconductor manufacturing 2023-02, Vol.36 (1), p.139-143
Main Authors: Fan, Dongyu, Xia, Zhiliang, Yang, Tao, Yang, Yuancheng, Wu, Linchun, Zhang, Kun, Liu, Lei, Chen, Xi, Yan, Yuan, Zhou, Wenxi, Huo, Zongliang
Format: Article
Language:English
Subjects:
Amorphous silicon
Annealing
Budgets
Controllability
Crystallization
Diffusion rate
Flash memories
High temperature
Laser beam annealing
Lasers
liquid phase crystallization
Liquid phases
Melting points
monocrystal-like channel
nanosecond Pulse laser anneal (ns-PLA)
Nanosecond pulses
Semiconductor device modeling
Semiconductor lasers
Single crystals
Three-dimensional displays
ultrasharp junction
Xtacking three-dimensional integrated NAND Flash (3D NAND Flash)
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Summary:The high thermal budget of three-dimensional NAND Flash (3D NAND Flash) is the key issue limiting the increase in vertical integration. The main purpose of this article is to design a local and high temperature annealing function to reduce the thermal budget and gain a high activation rate without diffusion at a target depth to improve the performance of 3D NAND Flash devices by laser annealing with green wavelength. The method of nanosecond pulse laser annealing (ns-PLA) for amorphous silicon (a-Si) crystallization and activation has been proven, and this method has the benefits of a low thermal budget and controllable heating. According to previous experiments, one of the important results is that ns-PLA with high energy can provide a high temperature that reaches the melting point of a-Si and obtain a deep and monocrystal-like silicon channel through liquid phase crystallization in 3D NAND applications and obtain a higher activation rate. These results cast emerging light on low thermal budget processes based on ns-PLA in 3D NAND flash for future architecture such as Xtacking architecture, and have significant ramifications for impurity activation rates and reducing channel leakages.
ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2022.3229471