Surface and interfacial study of atomic layer deposited Al2O3 on MoTe2 and WTe2

• Published in: Nanotechnology 2020-01, Vol.31 (5), p.055704-055704
• Main Authors: Zhu, H, Addou, R, Wang, Q, Nie, Y, Cho, K, Kim, M J, Wallace, R M
• Format: Article
• Language: English
• Subjects: atomic layer deposition; dielectric; high; plasma enhanced; surface functionalization; transition metal dichalcogenides
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/1361-6528/ab4e44

The atomic layer deposition (ALD) of high-k dielectrics could build an efficient barrier against moisture and O2 adsorption. Such a barrier is highly needed for MoTe2 and WTe2 transition metal dichalcogenides because of the poor structural stability and the fast oxidization in ambient air. In situ x-ray photoelectron spectroscopy and ex situ atomic force microscopy and scanning transmission electron microscopy were employed to report a comparative study between the growth of Al2O3 on MoTe2 and WTe2 by means of traditional thermal ALD and plasma-enhanced ALD (PEALD). Similar to what has been observed on other 2D materials such as MoS2 and Graphene, the thermal ALD results in an islanding growth of Al2O3 on MoTe2 due to the dearth of dangling bonds, whereas, a uniform coverage of Al2O3 on WTe2 is observed and likely contributed to the high concentration of intrinsic structural defects. The PEALD behavior is consistent between MoTe2 and WTe2 providing a conformal and linear growth rate (∼0.08 nm/cycle), which correlates with the creation of Te-O and metal-O nucleation sites. However, a thin layer of interfacial Mo or W oxides gradually forms, resulting from the plasma-induced damage in the topmost (1-2) layers. Attempts to enhance the Al2O3/MoTe2 interfacial quality by physically evaporating an Al2O3 seed layer are investigated as well. However, the evaporated Al2O3 process causes thermal damage on MoTe2, necessitating a more 'gentle' ALD technique for the surface passivation.