In situ Raman spectroscopy of nanostructuration by surface plasmas generated on alumina thin film-silicon bilayers

Thin film-silicon bilayers have been used to generate surface plasmas in air at atmospheric pressure, using nanosecond pulsed discharges. At low pulse repetition frequency (PRF), the deposition of an alumina film of 40 nm thickness on a silicon substrate enables the surface propagation of a discharg...

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Bibliographic Details
Published in:Plasma sources science & technology 2019-08, Vol.28 (8), p.85007
Main Authors: Pai, David Z, Pailloux, Frédéric, Babonneau, David
Format: Article
Language:English
Subjects:
Acoustics
atmospheric-pressure plasma
Automatic
Biomechanics
Chemical Sciences
dielectric barrier discharge
Electric power
Electromagnetism
Engineering Sciences
Fano interference
Fluid mechanics
Material chemistry
Materials and structures in mechanics
Mathematical Physics
Mechanics
nanosecond repetitively pulsed discharge
phonon confinement model
Physics
plasma-surface interaction
Polymers
Quantum Physics
Reactive fluid environment
silicon nanocrystals
Thermics
Vibrations
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Summary:Thin film-silicon bilayers have been used to generate surface plasmas in air at atmospheric pressure, using nanosecond pulsed discharges. At low pulse repetition frequency (PRF), the deposition of an alumina film of 40 nm thickness on a silicon substrate enables the surface propagation of a discharge otherwise localized near the anode. At high PRF, in situ Raman microspectroscopy has been employed to track changes to the surface due to the plasma in real time with a resolution of 1 s. Depending on the duration of plasma operation, the Raman spectrum of the optical phonon of silicon undergoes a shift to lower wavenumber and asymmetric broadening, or a pure enhancement in intensity. These changes are consistent with the presence of nanostructured silicon. Ex situ scanning electron microscopy confirms that such structuration occurs at several size scales, down to nanoparticles about 50 nm in diameter.
ISSN:0963-0252
1361-6595
1361-6595
DOI:10.1088/1361-6595/ab2d81