The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma

Compared to the conventional phase change materials, the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability. In this letter, the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar. The results showed that when CF4/Ar = 25/25,...

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Bibliographic Details
Published in:Journal of semiconductors 2020-12, Vol.41 (12), p.13-中插1
Main Authors: Xu, Yongkang, Song, Sannian, Fang, Wencheng, Li, Chengxing, Song, Zhitang
Format: Article
Language:English
Subjects:
etching characteristics
etching process
inductively couple plasma
mechanism
new phase change material
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Summary:Compared to the conventional phase change materials, the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability. In this letter, the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar. The results showed that when CF4/Ar = 25/25, the etching power was 600 W and the etching pressure was 2.5 Pa, the etching speed was up to 61 nm/min. The etching pattern of Ta-Sb2Te3 film had a smooth side wall and good perpendicularity (close to 90°), smooth surface of the etching (RMS was 0.51nm), and the etching uniformity was fine. Furthermore, the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy (XPS). The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction (XRD).
ISSN:1674-4926
DOI:10.1088/1674-4926/41/12/122103