Ultrafast charge transfer in MoS2/WSe2 p-n Heterojunction

Atomically thin and sharp van der Waals heterojunction can be created by vertically stacking p-type monolayer tungsten diselenide (WSe2) onto n-type molybdenum disulfide (MoS2). Theory predicts that stacked MoS2 and WSe2 monolayer forms type II p-n junction, creating a built-in electric field across...

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Bibliographic Details
Published in:2d materials 2016-05, Vol.3 (2)
Main Authors: Peng, Bo, Yu, Guannan, Liu, Xinfeng, Liu, Bo, Liang, Xiao, Bi, Lei, Deng, Longjiang, Sum, Tze Chien, Loh, Kian Ping
Format: Article
Language:English
Subjects:
electron transfer
heterostructure
MoS
two-dimensional
WSe
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Summary:Atomically thin and sharp van der Waals heterojunction can be created by vertically stacking p-type monolayer tungsten diselenide (WSe2) onto n-type molybdenum disulfide (MoS2). Theory predicts that stacked MoS2 and WSe2 monolayer forms type II p-n junction, creating a built-in electric field across the interface which facilitates electron-hole separation and transfer. Gaining insights into the dynamics of charge transfer across van der Waals heterostructure is central to understanding light-photocurrent conversion at these ultrathin interfaces. Herein, we investigate the exciton dissociation and charge transfer in a MoS2/WSe2 van der Waals hetero-structure. Our results show that ultrafast electron transfer from WSe2 to MoS2 take place within 470 fs upon optical excitation with 99% charge transfer efficiency, leading to drastic photoluminescence quenching and decreased lifetime. Our findings suggest that van der Waals heterostructure may be useful as active components in ultrafast optoelectronic devices.
ISSN:2053-1583
DOI:10.1088/2053-1583/3/2/025020