Large-area synthesis of 2D MoO3−x for enhanced optoelectronic applications

Two-dimensional (2D) molybdenum trioxide has been attracting research interest due to its bandgap tunability and a wide variety of desirable electronic/optoelectronic properties. However, the lack of a reproducible synthesis process for obtaining large coverage 2D MoO3 has limited the use of this ma...

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Bibliographic Details
Published in:2d materials 2019-05, Vol.6 (3)
Main Authors: Arash, Aram, Ahmed, Taimur, Govind Rajan, Ananth, Walia, Sumeet, Rahman, Fahmida, Mazumder, Aishani, Ramanathan, Rajesh, Sriram, Sharath, Bhaskaran, Madhu, Mayes, Edwin, Strano, Michael S, Balendhran, Sivacarendran
Format: Article
Language:English
Subjects:
2D semiconductors
large area synthesis
molybdenum oxide
UV sensing
vapor deposition
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Summary:Two-dimensional (2D) molybdenum trioxide has been attracting research interest due to its bandgap tunability and a wide variety of desirable electronic/optoelectronic properties. However, the lack of a reproducible synthesis process for obtaining large coverage 2D MoO3 has limited the use of this material. Here we report the synthesis of large area 2D MoO3−x via physical vapor deposition, using MoO3 powder as the precursor. The as-grown layers are directly deposited on SiO2/Si, eliminating the necessity for any transfer process. These as-grown MoO3−x layers allow for the large-scale fabrication of planar device arrays. The applicability of 2D MoO3−x in optoelectronics is established via the demonstration of low-power ultraviolet (UV) sensor arrays, with rapid response times (200 µs) and responsivity up to 54.4 A · W−1. At a bias voltage of 0.1 V, they are at least 400 times more power efficient than their next best contender.
ISSN:2053-1583
DOI:10.1088/2053-1583/ab1114