The mechanism of the electrochemical oxidation in the constant current mode of the porous silicon

In order to clarify the mechanism of the electrochemical oxidation (ECO) in the constant current mode of porous silicon (PS), the ECO process of PS in different concentration of electrolyte was studied in detail. According to the experiment facts, a hypothesis based on the mechanism of 'electri...

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Bibliographic Details
Published in:Materials research express 2019-07, Vol.6 (9), p.95020
Main Authors: Li, He, Xiaoning, Zhang, Yaogong, Wang, Wenjiang, Wang
Format: Article
Language:English
Subjects:
electrical break
electrochemical oxidation
porous silicon
self-limited effect
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Summary:In order to clarify the mechanism of the electrochemical oxidation (ECO) in the constant current mode of porous silicon (PS), the ECO process of PS in different concentration of electrolyte was studied in detail. According to the experiment facts, a hypothesis based on the mechanism of 'electrical break' was first proposed to explain the oxidation interruption that tends to occur in the lower concentration of the electrolyte. The experiment results show that the bottom of the porous layer is preferential oxidized in the ECO process since the oxidation process was governed by the holes injected from the substrate and supplied to the silicon-electrolyte interface. The appearance of the oxidation interruption during the ECO process is due to the electrical isolation between the Si substrate and electrolyte by the formation of a continuous oxide film at the bottom of the porous layer. The results obtained in this work indicated that it is easy to control the thickness of the oxide film by adjusting the concentration of electrolyte, which made the ECO method appears to be more attractive when incomplete oxidation is required. This present work is also contributes to the fundamental understanding of the ECO mechanism in the constant current mode of the PS material.
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/ab2d4e