High DC sensitivity of VOx bolometer thin films on Si3N4/SiO2 membranes fabricated by metal-organic decomposition

Well axis-oriented V2O5 thin films were fabricated on Si3N4/SiO2/Si substrates by metal-organic decomposition (MOD). These films were reduced to VOx films by heat treatment, and the films had temperature coefficient of resistances (TCRs) of 3.2-3.7%/K at 300 K. Then VOx thin film on Si3N4/SiO2 membr...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-06, Vol.53 (6)
Main Authors: Uchida, Takashi, Matsushita, Akihito, Tachiki, Takashi
Format: Article
Language:English
Online Access:Get full text
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Summary:Well axis-oriented V2O5 thin films were fabricated on Si3N4/SiO2/Si substrates by metal-organic decomposition (MOD). These films were reduced to VOx films by heat treatment, and the films had temperature coefficient of resistances (TCRs) of 3.2-3.7%/K at 300 K. Then VOx thin film on Si3N4/SiO2 membranes was realized by wet etching of the backside of the Si substrates using a 26 wt % KOH solution. The VOx thin film on Si3N4/SiO2 membrane had a high DC sensitivity of 6130 W−1, which was over 10 times higher than that of the film on the Si3N4/SiO2/Si substrate.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.068009