Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films

• Published in: Journal of the Electrochemical Society 2010, Vol.157 (6), p.H679
• Main Authors: Li, Zhefeng, Gordon, Roy G., Li, Huazhi, Shenai, Deo V., Lavoie, Christian
• Format: Article
• Language: English
• Subjects: AMMONIA; ANNEALING; DEPOSITION; FIELD EFFECT TRANSISTORS; INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; MICROELECTRONICS; national synchrotron light source; NICKEL; NICKEL NITRIDES; NICKEL SILICIDES; OXIDES; SEMICONDUCTOR DEVICES; SILICON; SUBSTRATES; SYNCHROTRONS; TETRALIN; TRANSISTORS; X-RAY DIFFRACTION
• ISSN: 0013-4651; 1945-7111
• DOI: 10.1149/1.3388721

Smooth, continuous, and highly conformal nickel nitride (NiN{sub x}) films were deposited by direct liquid injection (DLI)-chemical vapor deposition (CVD) using a solution of bis(N,N{prime}-di-tert-butylacetamidinato)nickel(II) in tetrahydronaphthalene as the nickel (Ni) source and ammonia (NH{sub 3}) as the coreactant gas. The DLI-CVD NiNx films grown on HF-last (100) silicon and on highly doped polysilicon substrates served as the intermediate for subsequent conversion into nickel silicide (NiSi), which is a key material for source, drain, and gate contacts in microelectronic devices. Rapid thermal annealing in the forming gas of DLI-CVD NiNx films formed continuous NiSi films at temperatures above 400 C. The resistivity of the NiSi films was 15{mu}{Omega} cm, close to the value for bulk crystals. The NiSi films have remarkably smooth and sharp interfaces with underlying Si substrates, thereby producing contacts for transistors with a higher drive current and a lower junction leakage. Resistivity and synchrotron X-ray diffraction in real-time during annealing of NiNx films showed the formation of a NiSi film at about 440 C, which is morphologically stable up to about 650 C. These NiSi films could find applications in future nanoscale complementary metal oxide semiconductor devices or three-dimensional metal-oxide-semiconductor devices such as Fin-type field effect transistors for the 22 nm technology node and beyond.