Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films

By combining scanning tunneling microscopy with density functional theory it is shown that the Bi(111) surface provides a well-defined incorporation site in the first bilayer that traps highly coordinating atoms such as transition metals (TMs) or noble metals. All deposited atoms assume exactly the...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-05, Vol.91 (19)
Main Authors: Klein, C, Vollmers, N J, Gerstmann, U, Zahl, P, Lukermann, D, Jnawali, G, Pfnur, H, Tegenkamp, C, Sutter, P, Schmidt, W G, Horn-von Hoegen, M
Format: Article
Language:English
Subjects:
Condensed matter
Density functional theory
Deposition
Insulators
Noble metals
OTHER INSTRUMENTATION
Topography
Transition metals
Tuning
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Summary:By combining scanning tunneling microscopy with density functional theory it is shown that the Bi(111) surface provides a well-defined incorporation site in the first bilayer that traps highly coordinating atoms such as transition metals (TMs) or noble metals. All deposited atoms assume exactly the same specific sevenfold coordinated subsurface interstitial site while the surface topography remains nearly unchanged. Notably, 3d TMs show a barrier-free incorporation. The observed surface modification by barrier-free subsorption helps to suppress aggregation in clusters. It allows a tuning of the electronic properties not only for the pure Bi(111) surface, but may also be observed for topological insulators formed by substrate-stabilized Bi bilayers.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.91.195441