Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the...

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Bibliographic Details
Published in:Nano letters 2015-12, Vol.15 (12), p.8245-8249
Main Authors: Koirala, Nikesh, Brahlek, Matthew, Salehi, Maryam, Wu, Liang, Dai, Jixia, Waugh, Justin, Nummy, Thomas, Han, Myung-Geun, Moon, Jisoo, Zhu, Yimei, Dessau, Daniel, Wu, Weida, Armitage, N. Peter, Oh, Seongshik
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
heterostructure
molecular beam epitaxy
quantum Hall effect
thin films
topological insulator
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Summary:Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.5b03770